Formation mechanism and Coulomb blockade effect in self-assembled gold quantum dots
Journal
Journal of Vacuum Science & Technology B
Journal Volume
22
Journal Issue
1
Pages
60-64
Date Issued
2004
Author(s)
Abstract
Nanometer-scale Au quantum dots have been assembled on SiO2 by controlling the reaction of raw materials to form a citrate Au sol and aminosilane/dithiol treated patterned Si wafer. Details of the formation mechanism have been studied. Three gold colloidal particles (∼15 nm), aligned in a chain to form a one-dimensional current path, were bridged on an 80 nm gap between the source and drain metal electrodes. The device exhibited a Coulomb blockade effect at 33 K.
SDGs
Other Subjects
Electron tunneling; Energy efficiency; Growth (materials); Integrated circuits; Particle size analysis; Semiconductor quantum dots; Silica; Silicon wafers; Transistors; Water; Coulomb blockade effect; Formation mechanism; Single electron transistors (SET); Gold
Type
journal article