Three-Dimensional Global Simulation of Thermal and Flow Fields in Horizontal Zone Melting Crystal Growth System
Date Issued
2004
Date
2004
Author(s)
Yeh, Bea-Chun
DOI
zh-TW
Abstract
The hot zone design is the most important task to decide the growth interface, the quality of the crystal and the growth rate. A computational model has been developed to simulate the three-dimensional global thermal and flow fields in horizontal zone melting crystal growth system. The method is so called “ two-level model”, which includes global model and local model. The global model includes the whole crystal growth system. We use the commercial Computational Fluid Dynamics software to combined convection/conduction/surface-to-surface radiation calculations. The melt convection and growth interface calculations in the local model are then made by the an efficient Finite volume method using multigrid acceleration within ampoule, feed, crystal, and melt, with the boundary conditions supplied by the global model simulations. The growth interface shape can be modified in the next global model simulation. The backwards and forwards calculations can be carried out until the thermal fields convergence. We also discuss the effects of gas flow on the global thermal fields and interface shape. Finally, we discuss some influences on the interface shape. To combine the two-level model can be efficient to analyze the global thermal fields and interface shape and it is helpful to design the hot zone in crystal growth system.
Subjects
水平區熔法
流場
熱場
melting
flow fields
horizontal zone
thermal fields
Type
thesis
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