Fabrication and Characterization of Si Nanocrystals Grown by Plasma-enhanced Chemical Vapor Deposition
Date Issued
2014
Date
2014
Author(s)
Ma, Chun-Che
Abstract
We have successfully fabricated Si nanocrystal embedded in Si-rich Oxide thin films on Si substrates by the processes of PECVD and the post-annealing. The existence of Si nanocrystal has been demonstrated by Photoluminescence(PL), X-ray Photoelectron Spectrum(XPS) and Transmission Electron Microscopy(TEM). And we also changed the gas flow rate of (SiH4/N2O), the temperature of annealing and the RF power of PECVD and then discussed about the influence on Si nanocrystal.
In this thesis, we observed that with increasing of the gas flow rate (SiH4/N2O), the PL peak blueshifts and the intensity increases first and then decreases. This effect is due to the increasing of the Si nanocrystal size with the increasing flow rate. And we also found that with rising of the annealing temperature, the major bonding way of Si atoms is transferred from Random Bonding Model (RBM) to Random Mixture Model (RMM) which makes Si nanocrystal more remarkable and fewer defects in the films. It also makes the PL peak blueshift and the intensity increase. And we observed the PL peak redshifts and the intensity increases with the rising RF power of PECVD. We ascribed this effect to the smaller nanocrystal and higher density of nanocrystal.
Subjects
奈米矽晶
富矽氧化矽薄膜
Type
thesis
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