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  4. Design of Broadband Amplifiers Using Distributed Configurations
 
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Design of Broadband Amplifiers Using Distributed Configurations

Date Issued
2007
Date
2007
Author(s)
Wu, Shin-Gann
DOI
zh-TW
URI
http://ntur.lib.ntu.edu.tw//handle/246246/53293
Abstract
Circuits with cost efficiency, flat frequency response and high frequency are required in wideband systems, such as optical communication, ultra-wide band (UWB) communication and the radio astronomy telescope. The designs of such circuits become important research topics recently. This dissertation includes the design methodology and implementation of microwave distributed amplifiers. The purpose of this dissertation is using distributed configurations to design wideband amplifiers. The basic operation and fundamental principles of the amplifiers are reviewed. The noise and power performances of the amplifiers are also discussed. Then we discussed two kinds of broadband amplifier configurations. One is the conventional distributed amplifier (CDA), and the other is the cascaded single-stage distributed amplifier (CSSDA). Four circuits are proposed in this thesis. All of them are implemented using packaged discrete transistors on a FR4 PCB. The first is a 2.4GHz single-stage amplifier. This is an amplifier with the most basic and simple configuration. The amplifier is fabricated on a 0.6-mm thick FR4 PCB. When the bias is VCE=3V and IC=10mA, at 2.4GHz, the measured gain is 6.6dB, and the input return loss is 31.4dB, and the output return loss is 30.1dB, and the isolation is 16dB. The second is a two-stage wideband amplifier. It is fabricated on a 1.6-mm thick FR4 PCB. When the bias is VDS=4V and IDS=43.1mA, around the 0.5-3GHz, the measured gain is 10.1±1.4dB, and the input return loss is better than 9.1dB, and the output return loss is better than 12.4dB, and the isolation is better than 20dB. The third is a four-stage wideband amplifier. It is fabricated on a 1.6-mm thick FR4 PCB. When the bias is VDS=4V and IDS=94.8mA, in the 0.5-3GHz range, the measured gain is 15.1±1.6dB, and the input return loss is better than 10.8dB, and the output return loss is better than 10.5dB, and the isolation is better than 50dB. The fourth is a CSSDA wideband amplifier. It is fabricated on a 1.6-mm thick FR4 PCB. When the bias is VDS=2V and IDS=10.6mA, about the 0.5-6GHz range, the measured gain is 21.5±3.5dB, and the input return loss is better than 8.5dB, and the output return loss is better than 11dB, and the isolation is better than 50dB.
Subjects
分散式
寬頻放大器
distributed
broadband amplifiers
Type
thesis
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ntu-96-J94921057-1.pdf

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