Large-Area Epitaxially Grown Two-Dimensional Crystals and Their Device Applications
Date Issued
2015
Date
2015
Author(s)
Lin, Meng-Yu
Abstract
Different approaches are adopted for epitaxially grown large-area 2-D crystals in this thesis. For graphene growth, by using the molecular beam epitaxy (MBE) technique to directly supply carbon atoms during the growth, the growth temperature of the graphene films can be greatly reduced on either metal template or dielectric substrate surfaces. After increasing the carbon source amount by using chemical vapor deposition (CVD) technique, epitaxially grown 2-D crystals such as graphene, MoS2 and MoS2/graphene hetero-structures can be obtained directly on sapphire substrates. The advances of 2-D crystal hetero-structures would move the focus of current researches from lateral carrier transport behaviors of single 2-D material to those on vertical 2-D crystal hetero-structures. For device applications, the Fermi level tuning of the graphene transistors is studied by using lateral gates and dual-cuts channel architectures. By using the atomic force microscope tip scrapping on the graphene surface, these devices can be easily fabricated and show tunable Fermi levels. Photo-induced Fermi level shift is also observed on transistors fabricated with MoS2/graphene hetero-structures.
Subjects
Graphene
MoS2
Chemical Vapor Deposition
Molecular Beam Epitaxy
Hetero-structures
Type
thesis
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