Optimization of Ohmic metal contacts for advanced GaAs-based CMOS device
Resource
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 30(2), 02B123
Journal
Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena
Pages
02B123
Date Issued
2012
Date
2012
Author(s)
Abstract
Ohmic contact resistivity of a nongold Pd/Ge/Ti/Pt on highly doped molecular beam epitaxy grown n-GaAs and In0.2Ga0.8As/GaAs (∼2 1018cm-3) has been investigated by varying Pd/Ge thicknesses and rapid thermal annealing (RTA) temperature/duration. An optimized Ohmic contact was obtained in the samples with Pd/Ge of 30 nm/30 nm, using RTA at 300 C for 10 s. Low Ohmic contact resistivity of 5.4 10-7 cm 2 on n-In0.2Ga0.8As has been achieved. The mechanism of the contact resistivity reduction has been studied using the energy-dispersive x-ray spectroscopy depth profile. © 2012 American Vacuum Society.
SDGs
Type
journal article
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