Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric
Resource
MICROELECTRONIC ENGINEERING, 91, 89-92
Journal
Microelectronic Engineering
Pages
89-92
Date Issued
2012
Date
2012
Author(s)
Abstract
Ga 2O 3(Gd 2O 3) [GGO] 3.5 nm-thick, with an in situ Al 2O 3 cap 1.5 nm thick, has been directly deposited on Ge substrate without employing interfacial passivation layers. The equivalent oxide thickness (EOT) of the gate stack is 1.38-nm. The metal-oxide-semiconductor (MOS) capacitors using Al 2O 3/GGO as the gate dielectric have given capacitance-voltage characteristics with frequency dispersions of ∼4% at accumulation (10 kHz-1 MHz) and frequency dependent flat-band voltage shift (∼30 mV). The dielectric constant of the GGO remains at 14-15. Furthermore, the TiN/Al 2O 3/GGO/Ge pMOSFET with a gate length of 1 μm has given a saturation drain current density, a maximum transconductance and a field-effect hole mobility of 800 μA/μm, 423 μS/μm, and 300 cm 2/V s, respectively. © 2011 Elsevier B.V. All rights reserved.
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