Ge metal-oxide-semiconductor devices with Al2O3/Ga2O3(Gd2O3) as gate dielectric

Resource

MICROELECTRONIC ENGINEERING, 91, 89-92

Journal

Microelectronic Engineering

Pages

89-92

Date Issued

2012

Date

2012

Author(s)

Chu, L.K.

Chiang, T.H.

Lin, T.D.

Lee, Y.J.

Chu, R.L.

Kwo, J.

DOI

URI

SDGs

[SDGs]SDG7

Type

journal article

File(s)

Name

18.pdf

Size

23.38 KB

Format

Adobe PDF

Checksum

(MD5):94aa81bfd154152817fd70c12cf47834