Oxide Semiconductor Field-Effect Transistor for High-Resolution Displays Capable of Deep Black Display
Journal
Digest of Technical Papers - SID International Symposium
Journal Volume
53
Journal Issue
1
Date Issued
2022-01-01
Author(s)
Okazaki, Yutaka
Sawai, Hiromi
Endo, Masami
Motoyoshi, Ryousuke
Shimada, Daigo
Kunitake, Hitoshi
Yamazaki, Shunpei
Huang, Kou Chang
Yoshida, Hiroshi
Chen, Min Cheng
Chang, Shou Zen
Abstract
In this paper, a small-sized oxide semiconductor field-effect transistor (OSFET) is developed as a driving transistor suited for small high-resolution displays of virtual reality/augmented reality devices. We examine the electrical characteristics of an OSFET with a channel length of 200 nm to note its excellent saturation characteristics, high breakdown voltage, high reliability, and low off-state current. Additionally, we fabricate a 3207-ppi organic light-emitting diode display to examine the performance of the OSFET in an active panel. The experimental results showed a high contrast ratio.
Subjects
AR | Display | High-resolution | OLED | Oxide semiconductor | VR
Type
conference paper