Nonsaturated large magnetoresistance and transport dynamics in a n-doped cryogenic WS e2 field-effect device
Journal
Physical Review B
Journal Volume
111
Journal Issue
12
ISSN
2469-9950
2469-9969
Date Issued
2025-03-24
Author(s)
Lin, Wei-Chen
Yeh, Ching-Chen
Zou, Jia-Zhu
Phan, Nhat Anh Nguyen
Uddin, Inayat
Le Thi, Hai Yen
Watanabe, Kenji
Taniguchi, Takashi
Kim, Gil-Ho
Abstract
Interest in the two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDs) continues to intensify, driven by their suitable band gaps to supplant silicon as next-generation semiconductor materials. Among various TMDs, tungsten diselenide (WSe2) is renowned for its superior electrical properties in carrier density and mobility under ambient conditions. Despite its notable attributes, the behavior of monolayer WSe2 in the electron-doped regime under cryogenic conditions remains largely uncharted, particularly concerning its magnetotransport properties. In this study, we reveal the transport mechanisms of monolayer WSe2 from high temperatures down to the cryogenic regime. As evident by Efros-Shklovskii variable-range hopping (E-S VRH) in the cryogenic regime, strong Coulomb interactions arise between electrons. Above 8 K, an uncommon nonsaturated quadratic large magnetoresistance (MR) can be explained by the wave-function shrinkage model, which is consistent with the E-S VRH transport mechanism. Notably, the nonsaturated quadratic large MR shows a magnitude up to 1740% at 13 T. These findings underscore the potential applications for monolayer WSe2 in cryogenic field-effect devices, magnetic sensors, and memory devices and mark a significant advance in magnetotransport research.
Publisher
American Physical Society (APS)
Type
journal article