Voltage-Tunable Dual-Band In(Ga)As Quantum-Ring Infrared Photodetector
Journal
IEEE Photonics Technology Letters
Journal Volume
19
Journal Issue
19
Pages
1511-1513
Date Issued
2007
Author(s)
Abstract
The ten-period In(Ga)As quantum-ring infrared photodetector (QRIP) prepared by molecular beam epitaxy is investigated. The quantum rings show narrow-sized distributions that are segregated into two groups. The QRIP demonstrates a dual-band operation with response peak shifting from the long wavelength of 9.5 μm at biases less than 0.6 V to the middle wavelength of 6.8 μm at biases larger than 0.8 V. The maximum peak responsivity at 20 K is 422 mA/W at 1.2-V bias. © 2007, IEEE. All rights reserved.
Subjects
Dual band; infrared photodetector; quantum dots (QDs); quantum ring
SDGs
Type
journal article