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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs 1-xSb x strain reducing layer
Details
Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs 1-xSb x strain reducing layer
Journal
Applied Physics Letters
Journal Volume
100
Journal Issue
4
Date Issued
2012
Author(s)
Huang, C.-T.
Chen, Y.-C.
SI-CHEN LEE
DOI
10.1063/1.3679132
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/498809
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-84863042333&doi=10.1063%2f1.3679132&partnerID=40&md5=f0e8ede6b08837606e4d97ad95b91757
SDGs
[SDGs]SDG7
Type
journal article