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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers
Details
Buckled SiGe layers by the oxidation of SiGe on viscous SiO2 layers
Resource
Applied Physics Letters 86 (1): 011909
Journal
Applied Physics Letters
Journal Volume
86
Journal Issue
1
Pages
011909-1-011909-3
Date Issued
2005
Date
2005
Author(s)
Yu, C.-Y.
Chen, P.-W.
Jan, S.-R.
MING-HAN LIAO
Liao, Kao-Feng
CHEE-WEE LIU
DOI
10.1063/1.1846937
URI
http://ntur.lib.ntu.edu.tw//handle/246246/148231
https://www.scopus.com/inward/record.uri?eid=2-s2.0-19744383897&doi=10.1063%2f1.1846937&partnerID=40&md5=e663736a686c3bd2f7b7d0b56bd64683
SDGs
[SDGs]SDG6
Type
journal article
File(s)
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Name
60.pdf
Size
444.63 KB
Format
Adobe PDF
Checksum
(MD5):2fc634287a8a29c73c307d6f47166abb
