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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Indication of lateral nonuniformity of effective oxide charges in hIGH-k gate dielectrics by TeRMAN's method
Details
Indication of lateral nonuniformity of effective oxide charges in hIGH-k gate dielectrics by TeRMAN's method
Journal
ECS Transactions
Journal Volume
1
Journal Issue
5
Pages
789-796
Date Issued
2005
Author(s)
JENN-GWO HWU
DOI
10.1149/1.2209324
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-33845266461&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/314474
Type
conference paper
