Study on Parameters of Diamond Dressers in Chemical Mechanical Polishing
Date Issued
2007
Date
2007
Author(s)
Hsiao, Chi-Ming
DOI
zh-TW
Abstract
Chemical mechanical polishing (CMP) is the mostly used planarization process in the semiconductor industry today. Due to the dual actions of chemicals corrosion and abrasive abrasion in the slurry, CMP achieves the effect of global planarization on the thin film surface of wafers. The abrasive, debris and by-product generated in the process cause the pores of the pad surface glazing, which in turn renders the performance of transporting slurry to decrease. Accordingly, the removal rate (RR) and non-uniformity (NU) will be affected. The diamond dressers are used to remove the glazing layer of the pad surface. This action makes the pad restore the ability in transporting the slurry. The dressers’ design factors and the parameters of the dressing process are apparently crucial to the performance of CMP process.
This study was made to observe and discuss the mechanisms of the diamond particles in removing the polymer material. Experimental work was followed by scratching pads with single-diamond dressers, and then a mathematical model was established for dressing rate (DR). The dressing simulation was made to examine DR and the surface condition of the ceramic dressers with different diamond shapes and sizes. The dressing simulation proceeds with different dressing recipes, which consist of four parameters including dressing pressure, pad speed, disk speed, and dressing time. Then the influence of the parameters of dressers and the dressing process on DR and the surface roughness (Ra) was explored. Finally, the scanning electron microscope (SEM) pictures for the surfaces of the sample pads were investigated to explore the relationship among DR, Ra, and the ability in transporting slurry.
Subjects
鑽石修整器
修整加工參數
修整率
表面粗糙度
Diamond Dresser
Dressing Parameters
Dressing Rate
Surface Roughness
Type
thesis
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