High-linearity high current drivability GaInP/GaAs MISFET using GaInP airbridge gate structure grown by GSMBE

Journal

International Semiconductor Conference, CAS

Pages

563-566

Date Issued

1995

Author(s)

Lin, Yo-Shen

DOI

10.1109/SMICND.1995.495079

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-0029520370&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/316532

http://ntur.lib.ntu.edu.tw/bitstream/246246/2007041910032092/1/00495079.pdf

Type

conference paper

File(s)

Name

00495079.pdf

Size

312.56 KB

Format

Adobe PDF

Checksum

(MD5):bee0d626eb8d1ab5f54a6c2b618080cf