積體電路相容微機電系統之研究-子計劃一 微機電式射頻積體電路

The topic of this project is the low noise amplifier. To lower down the noise
interference, a high Q inductor is very importance. However, the inductors fabricated
in the CMOS process usually don’t have a high Q factor. There are two approaches to
improve the Q factor for the inductor. One is to reduce the substrate loss and another
is to reduce conductive loss. In this project we utilize the MEMs techniques to
accomplish the second problem.
Finally, we designed a 5.2 GHz LNA with a 3db NF and thinned down its
substrate to 20mm. This thinned LNA is measured having 2.17dB NF. By this MEMs
technique the LNA is improved by 0.8dB successfully.