Diffusion soldering of Pb-doped gete thermoelectric modules with Cu electrodes using a thin-film Sn interlayer
Journal
Journal of Electronic Materials
Journal Volume
42
Journal Issue
3
Pages
359-365
Date Issued
2013
Author(s)
Abstract
Directly coating a GeTe(Pb) thermoelectric device with a Ni barrier layer and an Ag reaction layer and then diffusion soldering with a Cu electrode coated with Ag and Sn leads to breakage at the GeTe(Pb)/Ni interface and low bonding strengths of about 6 MPa. An improved process, precoating with 1 μm Sn film and heating at 250 C for 3 min before electroplating with Ni and Ag layers, results in satisfactory bonding strengths ranging from 12.6 MPa to 19.1 MPa. The precoated Sn film leads to the formation of a (Ni,Ge)3Sn4 layer between the GeTe(Pb) thermoelectric material and Ni barrier layer, reducing the thermal stress at the GeTe(Pb)/Ni interface. © 2012 TMS.
Type
journal article