A V-Band MMIC SPDT passive HEMT switch using impedance transformation networks
Resource
Microwave Symposium Digest, 2001 IEEE MTT-S International
Journal
Microwave Symposium, 2001 IEEE MTT-S International
Pages
-
Date Issued
2001-05
Date
2001-05
Author(s)
DOI
N/A
Abstract
A V-Band MMIC single pole double throw (SPDT) switch using GaAs PHEMT process is designed, fabricated and tested. In contrast to the conventional resonant-type switch design method, this passive FET switch circuit utilizes impedance transformation to compensate the drain-source capacitance effect for the off-state in millimeter-wave frequency range. This SPDT switch has a measured isolation better than 30 dB for the off-state and 4 dB insertion loss for the on-state from 53 GHz to 61 GHz. The isolation performance of this design approach outmatches previously published FET switches in this frequency range.
SDGs
Type
journal article
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