Current-induced giant electroresistance in (formula presented) thin films
Journal
Physical Review B - Condensed Matter and Materials Physics
Journal Volume
67
Journal Issue
6
Date Issued
2003
Author(s)
Debnath, A. K.
Abstract
The electroresistance (ER) and magnetoresistance (MR) of (formula presented) (LSMO) thin films with different thicknesses (t) are investigated. We found a metallic-to-insulating (M-I) transition in films with (formula presented) For the 80-nm film, a giant room-temperature ER ratio of 11.3% is achieved with an electric current of 0.9 mA. This value of the ER ratio is four times larger resistive response than that of the MR ratio under 1 T. The enhancement of the ER value in these disordered metallic LSMO thin films is correlated with the coexistence of metallic and insulating phases and attributed to the mechanism of phonon-assisted delocalization. © 2003 The American Physical Society.
Type
journal article