Performance improvement of a triple-junction GaAs-based solar cell using a SiO<inf>2</inf>-nanopillar/SiO<inf>2</inf>/TiO<inf>2</inf> graded-index antireflection coating
Journal
International Journal of Nanotechnology
Journal Volume
11
Journal Issue
1-4
Pages
311-321
Date Issued
2014
Author(s)
Abstract
In this study, the enhanced performance of a triple-junction GaAs-based solar cell using a SiO2-nanopillar/SiO2/TiO2 graded-index antireflection coating (GI-ARC) was demonstrated. The optical reflectance, photovoltaic current-voltage (I-V), and external quantum efficiency (EQE) of a cell with a SiO2/TiO2 double-layer (DL) ARC and a cell with a GI-ARC were measured and compared. The cell with a GI-ARC exhibited the lowest optical reflectance. Thus, the average EQE enhancements (?EQE) of the cell with a GI-ARC compared to the cell with a DL-ARC were 5.88% for the top cell and -1.56% for the middle cell. In addition, a small difference in the photocurrent generated between the top cell and the middle cell was achieved. Finally, an additional 0.52% increase (from 24.99% to 25.51%) in conversion efficiency was obtained. Copyright © 2014 Inderscience Enterprises Ltd.
Subjects
Current matching; External quantum efficiency; Graded-index antireflection coating; Triple-junction solar cell
SDGs
Other Subjects
Antireflection coatings; Efficiency; Gallium arsenide; III-V semiconductors; Nanopillars; Reflection; Semiconducting gallium; Silica; Solar cells; Current matching; Double layers; External quantum efficiency; Graded index; Optical reflectance; Photovoltaic currents; Triple junction; Triple junction solar cells; Quantum efficiency
Type
journal article