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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy
Details
Incorporation of group V elements in GaAsSbN grown by gas-source molecular beam epitaxy
Journal
OPT 2006
Pages
AO-53
Date Issued
2006-12
Author(s)
T. C. Ma
Y. T. Lin
T. Y. Chen
HAO-HSIUNG LIN
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/325295
Type
conference paper