CMOS-compatible electrochemical process for RF CMOS inductors
Resource
TRANSDUCERS 2009. International Solid-State Sensors, Actuators and Microsystems Conference, 2118-2121
Journal
TRANSDUCERS 2009 - 15th International Conference on Solid-State Sensors, Actuators and Microsystems
Pages
2118-2121
Date Issued
2009
Author(s)
Abstract
This paper demonstrates a CMOS-compatible electrochemical etching process to reduce effectively the substrate loss which parasitizes RF CMOS inductors while maintains the mechanical support of silicon substrate. The advantages of this post-process are CMOS-compatible and mask-less that decreases substantially the difficulty and the cost of fabrication. The result presents that the quality factor of RF CMOS inductor is enhanced 100 % at 9.8 GHz through this post-process. In addition, this technique could advance the development of SOC (system on a chip) and the applications of RF CMOS circuit.
SDGs
Type
conference paper
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