Formation of cylindrical profile of Si by KrF excimer laser system for optical interconnect
Journal
IEEE Conference on Nanotechnology
Pages
5-8
Date Issued
2011
Author(s)
Abstract
A technique applying the homogenized KrF excimer laser reformation to fabricate Si cylindrical profile is presented. High-power excimer laser was used to illuminate high-aspect-ratio Si ridges which were fabricated using typical lithography and etching process. The Si ridges were then melted and reshaped to cylinders due to surface tension. The structure can be further preceded by thermal oxidation to produce wave guiding photonics. It is capable of fabricating sub-micrometer Si waveguides with extremely smooth surface.
Type
conference paper