Multiferroic properties of hexagonal YbMnO3 thin films
Journal
IEEE Transactions on Magnetics
Journal Volume
45
Journal Issue
10
Pages
4265-4267
Date Issued
2009
Author(s)
Han, T. C.
Abstract
The hexagonal (HX) YbMnO 3 thin films were synthesized on the substrates of (111)Y 2 O 3 :ZrO 2 and (111)Pt/(0001)Al 2 O 3 by pulsed laser deposition (PLD), and their structural, magnetic, and electrical properties are measured. The temperature-dependent magnetization clearly displays an antiferromagnetic ordering near 80 K with field perpendicular to the film surface. In the curve of polarization-voltage, the HX-YbMnO 3 thin films show distinct ferroelectricity with the room-temperature remanent polarization and coercive field being 1.1 muC/cm 2 and 58 kV/cm, respectively. These results indicate that the HX-YbMnO 3 thin films are prominent candidates for the applications of multiferroic devices.
Type
journal article