STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices
Journal
IEEE International Semicondcutor Device Research Symp (ISDRS)
Date Issued
2007-12
Author(s)
Abstract
For nanometer-regime PD SOI CMOS devices, the S/D region may be very small-the influence of the STI-induced mechanical stress cannot be neglected. The influence of STI-induced mechanical stress in the subthrehsold kink behavior of a 40nm PD SOI NMOS device is reported.
Type
conference paper