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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices
Details
STI Mechanical Stress Induced Subthreshold Kink Effect of 40nm PD SOI NMOS Devices
Journal
IEEE International Semicondcutor Device Research Symp (ISDRS)
Date Issued
2007-12
Author(s)
I. Lin
V. Su
J. B. kuo
M. Ma
C. T. Tsai
C. S. Yeh
D. Chen
JAMES-B KUO
DOI
10.1109/isdrs.2007.4422325
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/333623
Type
conference paper