Effect of Passivation on BEOL-Compatible Oxide Semiconductor Transistor
Journal
2024 International VLSI Symposium on Technology, Systems and Applications (VLSI TSA)
Part Of
2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024 - Proceedings2024
ISBN (of the container)
979-835036034-9
Date Issued
2024-04-22
Author(s)
Chi-Yuan Kuo
Tsung-Tien Lo
Yun-Ping Chiu
Wei-Chen Lin
Hsien-Yi Liao
Chi-Hang Tsai
Sheng-Chia Lu
Hsin-Chu Chen
Haw-Tyng Huang
Po-Chun Yeh
Abstract
This study has demonstrated the scalability of BEOL- compatible copper oxide-based TFT. At a temperature of 300 °C, pure phase thin film is synthesized via applying oxygen annealing on sputtered metallic Cu. Additionally, passivation by atomic layer deposition is observed to suppress off-state leakage by 2 orders of magnitudes. Moreover, the scalability is demonstrated by the successful fabrication of a 6nm thin film TFT. The role of passivation is examined through PBS test.
Event(s)
2024 International VLSI Symposium on Technology, Systems and Applications, VLSI TSA 2024
SDGs
Publisher
IEEE
Type
conference paper