InAsN/InGaAs/InP quantum well structures for mid-infrared diode lasers
Resource
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Journal
Lasers and Electro-Optics Society, 2003. LEOS 2003. The 16th Annual Meeting of the IEEE
Pages
-
Date Issued
2003
Date
2003
Author(s)
Lin, H.H.
Shih, D.K.
Lin, Y.H.
Chiang, K.H.
DOI
1092-8081
Abstract
InAsN/InGaAs multiple quantum wells (MQWs) structures for midinfrared diode lasers is grown on (100) InP substrates by using a VG V-80H gas-source molecular epitaxy (GSMBE). After the GSMBE growth, the laser sample is annealed at 575/spl deg/C for 20 min under N ambient in order to improve the crystal quality. The PL spectrums of the laser structure before and after annealing are studied. Then the structure is processed into 50-nm-wide broad-area lasers. Laser oscillation under pulsed injection current was obtained from 10K to 260K.
Type
journal article
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