Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS2 Self-Powered Photodetector
Journal
ACS Nano
Journal Volume
16
Journal Issue
10
Start Page
17347
End Page
17355
ISSN
1936-0851
1936-086X
Date Issued
2022-09-26
Author(s)
Yue Zhao
Jiung Cho
Miri Choi
Cormac Ó Coileáin
Sunil Arora
Kuan-Ming Hung
Mohamed Abid
Han-Chun Wu
Abstract
van der Waals heterojunctions with tunable polarity are being actively explored for more Moore and more-than-Moore device applications, as they can greatly simplify circuit design. However, inadequate control over the multifunctional operational states is still a challenge in their development. Here, we show that a vertically stacked InSe/SnS2 van der Waals heterojunction exhibits type-II band alignment, and its polarity can be tuned by an external electric field and by the wavelength and intensity of an illuminated light source. Moreover, such SnS2/InSe diodes are self-powered broadband photodetectors with good performance. The self-powered performance can be further enhanced significantly with gas adsorption, and the device can be quickly restored to the state before gas injection using a gate voltage pulse. Our results suggest a way to achieve and design multiple functions in a single device with multifield coupling of light, electrical field, gas, or other external stimulants.
Publisher
American Chemical Society (ACS)
Type
journal article