Study of Rapid Development Technology in Electron Beam Lithography
Date Issued
2014
Date
2014
Author(s)
Yeh, Hsiu-Yun
Abstract
In this study, we have established an experiment of single and multiple spots to measure the radius under different developing time in electron beam lithography (EBL). By linking the beam energy and developing rate, we are able to find out the developing rate function and the interaction between multiple patterns. Following, we apply the rapid developing method and developing rate model to optimize the parameters so that we are able to limit the range of the patterns.
In the experiment, we have found that the radius of central spot is not affected by the ones surrounded it. Besides, the developing rate is very high in a short developing time. As a result, if we use rapid developing method to limit the range of developed patterns in the range of primary beam, we can further narrow down the line width.
Finally, we apply the primary beam and developing rate model on exposing line arrays. After optimizing the parameters such as dosage and spots distance and exposure line arrays with a period of 100nm, the line width decreases by 44% to 19.6nm.
Subjects
電子束微影
顯影速率
電子散射
電子強度分佈
Type
thesis
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