CdS-nanoparticle light-emitting diode on Si
Journal
Proceedings of SPIE
Journal Volume
4641
Pages
102-110
Date Issued
2002
Author(s)
Abstract
The fabrication of CdS-nanoparticle light emitting diodes (LEDs) on Si and their properties at room temperature and variant temperatures are reported. Due to passivation of p- hydroxyl thiophenol group around nanoparticles, 86-meV spectral shift of free exciton transition at room temperature is observed. Controlled conditions for the preparation of CdS-nanoparticle LED such as heat treatment and/or with oxygen-rich environment are found to have significant influences on emission spectra. Radiative recombination of carriers trapped in oxygen-impurity level of 273 meV presents in samples prepared in oxygen-rich environment. Coalescence of nanoparticles into bulk form also occurs to contribute to increased magnitude of luminescence. Spectral behaviors of electroluminescence with varied temperature are studied.
Type
conference paper
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