Application of an innovative process technology for phase shift mask in near-field phase shift lithography
Journal
Advanced Science Letters
Journal Volume
13
Pages
73-79
Date Issued
2012
Author(s)
Abstract
Lithography is achieved by far-field diffraction. With this technology, we can obtain the feature pattern in the wavelength of sub-micron. Meanwhile, it has all the advantages of mask-less technology: no expensive cost of traditional mask, shortened process time, fast generation of mask pattern, easy mask design modification, and capability of small quantity or experimental production. In this study, a wafer mold is made by semiconductor processing. Then, we try to produce a transparent phase shift mask by innovative gas-assisted nano-imprint technology. Finally, a study and simulation analysis is carried out on the process of near-field contacted phase shift lithography. MATLAB is adopted in the calculation and simulation. After comparing the experimental results with the simulations, we find that the length of explosion has a direct influence on diffraction. The distribution of the diffraction energy may impact the entire explosion region and result in the energy differences accumulated in the region. It's proved that diffraction component utilizing far-field diffraction simulation has a similar effect of phase shift lithography with near-field simulation. © 2012 American Scientific Publishers. All rights reserved.
Type
journal article