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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Ab initio calculations of charged point defects in GaN
Details
Ab initio calculations of charged point defects in GaN
Journal
Physica Status Solidi C: Conferences
Journal Volume
2
Journal Issue
1
Pages
507-510
Date Issued
2005
Author(s)
CHIH-CHUNG YANG
Gulans, A.
Evarestov, R.A.
Tale, I.
CHIH-CHUNG YANG
DOI
10.1002/pssc.200460219
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-27344435051&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/314837
Type
conference paper