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College of Science / 理學院
Applied Physics / 應用物理研究所
A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs
Details
A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs
Journal
IEEE/Cornell Conference on High Performance Devices, 2000
Pages
182-191
Date Issued
2000
Author(s)
Gila, BP
Lee, KN
Johnson, W
Ren, F
Abernathy, CR
Pearton, SJ
MINGHWEI HONG
Kwo, J
Mannaerts, JP
Anselm, KA
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/289578
Type
conference paper