Publication: Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
| cris.lastimport.scopus | 2025-05-07T22:10:47Z | |
| cris.virtual.department | Applied Physics | en_US |
| cris.virtual.department | Center for Condensed Matter Sciences | en_US |
| cris.virtual.department | Electronics Engineering | en_US |
| cris.virtual.department | Physics | en_US |
| cris.virtual.orcid | 0000-0003-4657-0933 | en_US |
| cris.virtualsource.department | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| cris.virtualsource.department | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| cris.virtualsource.department | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| cris.virtualsource.department | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| cris.virtualsource.orcid | 9155e83b-46d3-4e25-8da6-6f15597d416a | |
| dc.contributor.author | Chu, R.L. | en_US |
| dc.contributor.author | Chiang, T.H. | en_US |
| dc.contributor.author | Hsueh, W.J. | en_US |
| dc.contributor.author | Chen, K.H. | en_US |
| dc.contributor.author | Lin, K.Y. | en_US |
| dc.contributor.author | Brown, G.J. | en_US |
| dc.contributor.author | Chyi, J.I. | en_US |
| dc.contributor.author | Kwo, J. | en_US |
| dc.contributor.author | MINGHWEI HONG | en_US |
| dc.date.accessioned | 2019-12-27T07:49:19Z | |
| dc.date.available | 2019-12-27T07:49:19Z | |
| dc.date.issued | 2014 | |
| dc.identifier.doi | 10.1063/1.4901100 | |
| dc.identifier.scopus | 2-s2.0-84908674296 | |
| dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/443326 | |
| dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84908674296&doi=10.1063%2f1.4901100&partnerID=40&md5=d890fff9c5742b0735d3331b6d48adfe | |
| dc.relation.ispartof | Applied Physics Letters | |
| dc.relation.journalissue | 18 | |
| dc.relation.journalvolume | 105 | |
| dc.title | Passivation of GaSb using molecular beam epitaxy Y <inf>2</inf> O <inf>3</inf> to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors | |
| dc.type | journal article | en |
| dspace.entity.type | Publication |