Enhancing electroluminescence from metal-oxide–silicon tunneling diodes by nano-structures of oxide grown by liquid-phase method
Resource
Materials Chemistry and Physics 77 (2): 430-433
Journal
Materials Chemistry and Physics
Journal Volume
77
Journal Issue
2
Pages
430-433
Date Issued
2003
Date
2003
Author(s)
Abstract
Significant enhancement of electroluminescence (EL) at Si bandgap energy is discovered from metal-oxide-semiconductor tunneling diode on p-type Si with oxide grown by liquid-phase deposition (LPD). The LPD grown oxide has nano-structures with the grain size of 10-20nm. The nano-structure of oxide causes the simultaneous localization of electrons and holes at the Si/SiO2 interface, similar to the formation of excitons. This makes the process of the phonon-assisted radiative recombination of electron-hole pair more like two-particle collision than three-particle collision, so increasing the probability of radiative recombination. The measured EL efficiency could be more than 1×10-6. © 2002 Elsevier Science B.V. All rights reserved.
Subjects
Electroluminescence; Liquid-phase deposition; Metal-oxide-semiconductor tunneling diode; Radiative recombination
Other Subjects
Deposition; Electroluminescence; Electrons; Energy gap; Excitons; Grain size and shape; Interfaces (materials); Nanostructured materials; Phonons; Metal oxide silicon tunneling diodes; Tunnel diodes
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
46.pdf
Size
104.24 KB
Format
Adobe PDF
Checksum
(MD5):6e2d7f011f31805a696ca5049ca48dd4