DC and RF characteristics of E-mode Ga0.51In0.49P-In0.15Ga0.85As pseudomorphic HEMTs
Journal
IEEE Electron Device Letters
Journal Volume
24
Journal Issue
3
Pages
132-134
Date Issued
2003
Author(s)
Abstract
The DC and RF characteristics of Ga/sub 0.49/In/sub 0.51/P-In/sub 0.15/Ga/sub 0.85/As enhancement- mode pseudomorphic HEMTs (pHEMTs) are reported for the first time. The transistor has a gate length of 0.8 μm and a gate width of 200 μm. It is found that the device can be operated with gate voltage up to 1.6 V, which corresponds to a high drain-source current (I/sub DS/) of 340 mA/mm when the drain-source voltage (V/sub DS/) is 4.0 V. The measured maximum transconductance, current gain cut-off frequency, and maximum oscillation frequency are 255.2 mS/mm, 20.6 GHz, and 40 GHz, respectively. When this device is operated at 1.9 GHz under class-AB bias condition, a 14.7-dBm (148.6 mW/mm) saturated power with a power-added efficiency of 50% is achieved when the drain voltage is 3.5 V. The measured F min is 0.74 dB under I/sub DS/=15 mA and V/sub DS/=2 V.
SDGs
Type
journal article