Ge-on-glass detectors
Journal
Applied Physics Letters
Journal Volume
91
Journal Issue
4
Date Issued
2007
Author(s)
Lin, C.-H.
Chiang, Y.-T.
Hsu, C.-C.
Lee, C.-H.
Huang, C.-F.
Lai, C.-H.
Cheng, T.-H.
Abstract
A single crystalline thin film of Ge on glass is fabricated using wafer bonding and smart cut. A simple metal-insulator-semiconductor detector is demonstrated for visible light and telecommunication wavelength. The implantation damage of separated Ge film bonded on glass is removed by chemical etching, and the surface roughness is reduced from 14to4nm. The defect removal reduces the dark current by a factor of 30 and increases the responsivity by a factor of 1.85 at visible wavelength. The responsivity of 0.27A∕W at 1.3μm wavelength for an unetched device does not increase after damage removal due to the decrease of the absorption layer thickness.
Type
journal article