Study of Self-Organized InAs/GaAs Quantum Dots by Photoluminescence and Photoreflectance
Resource
Japanese Journal of Applied Physics 42 (9A): 5876-5879
Journal
Japanese Journal of Applied Physics
Journal Volume
42
Journal Issue
9A
Pages
5876-5879
Date Issued
2003
Date
2003
Author(s)
Hwang, Jenn-Shyong
Chen, Mei-Fei
Lin, Kuang-I
Tsai, Chiang-Nan
Hwang, Wen-Chi
Chou, Wei-Yang
Chen, Ming-Ching
Abstract
Using photoluminescence and photoreflectance ranging from 8 to 300 K, this study investigates transition energies in InAs/GaAs quantum dot (QD) samples grown on (100) misoriented 7° towards (100) GaAs substrates using gas source molecular beam epitaxy with various group V/III flux ratios. Only the exciton transition appears in the photoluminescence spectra (PL) of all samples. Experimental results indicate that the decrease in the full width at half maximum (FWHM) of the PL peak with increasing temperature can be attributed to the effective suppression of non-predominant size QD emissions due to carrier tunneling between nearby dots. Signals from all relevant portions of the samples have been observed in the PR spectra. One to three transition energies in QDs, depending on the dot size, are observed in the PR spectra.
Subjects
Photoluminescence; Photoreflectance; Quantum dots; Transition energy
SDGs
Other Subjects
Crystal growth; Crystal orientation; Electron tunneling; Gas lasers; Laser beams; Light reflection; Molecular beam epitaxy; Monochromators; Photodetectors; Photoluminescence; Semiconducting gallium arsenide; Semiconducting indium compounds; Photoluminescence spectra; Photoreflectance spectra; Semiconducting indium arsenide; Transition energy; Semiconductor quantum dots
Type
journal article
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