Effect of buffer layers on electrical, optical and structural properties of AlGaN/GaN heterostructures grown on Si
Journal
Japanese Journal of Applied Physics Part 1
Journal Volume
45
Journal Issue
4 A
Pages
2516-2518
Date Issued
2006
Author(s)
Abstract
AlGaN/GaN heterostructures with different buffer layers were grown on Si substrates by metal-organic vapor phase epitaxy (MOVPE). The electrical property of the two-dimensional electron gas (2DEG) formed at the AlGaN/GaN interface was correlated with both the optical and structural quality of the GaN layer involved. A combination of two sets of high-temperature and low-temperature AlN and an ultrashort exposure to SiH4 showed the best-grown GaN, followed by a similar buffer layer without the SiH4 exposure, and a graded AlGaN buffer layer only. The enhancements in both electron mobility and 2DEG density were also accompanied by a reduced donor-acceptor pair (DAP) emission and a reduced dislocation density in the top GaN grown. © 2006 The Japan Society of Applied Physics.
Subjects
2DEG; AlGaN/GaN; Buffer layer; Defects; MOVPE; Si substrate
Other Subjects
Dislocations (crystals); Electron mobility; Gallium nitride; Heterojunctions; Metallorganic vapor phase epitaxy; Optical properties; 2DEG; AlGaN/GaN; Buffer layers; Si substrate; Semiconducting aluminum compounds
Type
journal article