Silicon-based Luminescence Devices Using a Mixture of Erbium Oxide Nanoparticles and Spin-on Glass
Date Issued
2006
Date
2006
Author(s)
Shih, Ping-Hung
DOI
zh-TW
Abstract
Because the demand for data transmission increases very fast, fiber-optic communication becomes a very important technology. Erbium doped fiber amplifier is the core technology in optical communication system. This is why Er3+ becomes an attractive issue for researches. Also, nanotechnology provides a different way to solve the problem. Many people focus on the surface effect of the nanoparticles and use it to increase emission efficiency. We combine these two advantages and introduce a new fabrication process to fabricate a luminescence device: using nanoparticles to fabricate Erbium doped luminescence devices. We mix nanoparticles and use spin coating process to deposit it on a silicon wafer.
The emitting layer emits light at 1530 nm which is one of the most important wavelengths in optical communication. The basic compositions of this emitting layer are Er3+ and spin-on glass (SOG). Er3+ comes from Er2O3, while SOG is already popularly used in semiconductor fabrication. We also add other materials to increase the luminescence efficiency, like Yb2O3 nanoparticles and P2O5. Besides, the annealing process is certainly an important topic and is investigated in this work. The optical gain will also be discussed. Another important physical property is up-conversion luminescence. According to this property, we can use available low-cost near-infrared semiconductor laser to pump the device. Through the process of multi-photon absorption, the electron can transit to higher energy levels to produce visible light. In the end, we measure the spectra at low temperature in order to further realize the property of Er3+.
Comparing to other kinds of fabrication technology, like ion implantation and solid-phase epitaxy, our fabrication process is much simpler and less expensive. It shows the promise of integrating light emitting device with the integrated circuit and deserves further integration.
Subjects
奈米粒子
鉺
矽基元件
nanoparticle
erbium
silicon-based devices
Type
thesis
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