Analysis of active matrix GaN-based HFET switch circuits integrated with GaN LED micro-displays
Journal
IEEE Electron Device Letters
Journal Volume
26
Journal Issue
11
Pages
808-810
Date Issued
2005
Author(s)
Shih, G.A.
Abstract
We demonstrate a novel GaN-based heterojunction field effect transistor (HFET) active-matrix circuit for an light-emitting diode (LED) microdisplay. Simulation results are shown with basic and improved circuits. Variations of process and material growth conditions are discussed by correlating device parameters with LED flow currents in this circuit. It shows that the HFET-LED control circuit approach provides a stability path to mitigate variations of LED currents during operations. © 2005 IEEE.
Subjects
GaN; Heterojunction field effect transistor (HFET); Light-emitting diode (LED); Microdisplays
Other Subjects
Computer simulation; Display devices; Gallium nitride; Heterojunctions; Integrated circuits; Leakage currents; Light emitting diodes; Semiconductor device models; Semiconductor growth; Semiconductor switches; Heterojunction field effect transistor (HFET); Microdisplays; Field effect transistors
Type
journal article