Ultrathin gate oxides prepared by tensile-stress oxidation in tilted cathode anodization system
Journal
Journal of the Electrochemical Society
Journal Volume
155
Journal Issue
3
Date Issued
2008
Author(s)
Abstract
The ultrathin gate oxides prepared by mechanical tensile-stress oxidation in the tilted cathode anodization system were studied. By bending the silicon wafer during the anodization process and releasing stress in the final stage, we applied mechanical tensile stress onto the silicon wafer to overcome the lattice mismatch between Si and . As a result of external mechanical stress in the gate oxide, different electrical characteristics of the metal-oxide-superconductor capacitors are discovered. Flatband voltages of the experimental samples with tensile-stress shift positively due to bandgap narrowing effect. It was observed that the quality and reliability of grown by tensile-stress oxidation are significantly improved.
Type
journal article