Fabrication of Nanowire Array by Metal-Assisted Etching and application on N-type Rear-Emitter Silicon Solar Cell
Date Issued
2012
Date
2012
Author(s)
Chou, Li-Hsing
Abstract
In the process of solar cell fabrication, the factors of efficiency losses are Short-Circuit losses, Open-Circuit Voltage losses and Fill Factor losses. The Short-Circuit losses combined Reflection losses, Shading losses and absorption losses, Anti-Reflection Coating and Surface Texturing which can reduce the reflection losses to improve the efficiency.
Compare with traditional Anti-Reflection Coating, Deep Sub-micron Surface Texturing has potential to replace the former due to its ability of Board-banded low reflectance. N-type crystalline silicon is recently attracted much attention due to higher minority carrier lifetime and toleration of metallic impurity.
In this thesis, we fabricate the nanowire array on N-type silicon wafer through assisting of silver ions and analyze its morphology and reflectance. The diameter of nanowire is about 60nm. Finally, we fabricate the nanowire array solar cell and measure its IV character by Solar Simulator and Spectral response by Quantum Efficiency measurement device; we also discuss the effect of rapid thermo process for surface passivation and how different length effect on efficiency. Finally, we use multi-crystalline silicon to fabricate nanowire solar cell and reach the best efficiency to 10％
Subjects
n-type
rear-emitter
metal-assisted etching
nanowire array
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-101-R99524078-1.pdf
Size
23.54 KB
Format
Adobe PDF
Checksum
(MD5):13477ec6dc68aa3155785145cff117f6