Comparison of the performance of InGaNAlGaN MQW LEDs grown on c-plane and a-plane sapphire substrates
Journal
Electrochemical and Solid-State Letters
Journal Volume
10
Journal Issue
1
Pages
H5-H7
Date Issued
2007
Author(s)
Liao, W.-T.
Gong, J.-R.
Wang, C.-L.
Wang, W.-L.
Tsuei, C.-C.
Lee, C.-Y.
Chen, K.-C.
Ho, J.-R.
Abstract
We report a comparative study on the performance of multiple quantum well (MQW) light emitting diodes (LEDs) fabricated on c- and a-plane sapphire substrates, respectively. It was found that the LEDs grown on a-plane sapphire substrates exhibited enhanced electroluminescence intensity, decreased double crystal X-ray diffraction linewidth, reduced etching pit density, and smaller ideality factor compared to those deposited on c-plane sapphire substrates. The improved LED characteristics are attributed to threading dislocation density decrement inside the LEDs due to the reduced mismatch between LED structure and a-plane sapphire substrate.
Type
journal article