A 24-GHz transformer-based stacked-FET power amplifier in 90-nm CMOS technology
Journal
Asia-Pacific Microwave Conference Proceedings, APMC
Journal Volume
3
Date Issued
2015
Author(s)
Abstract
A 24-GHz transformer-based stacked-FET power amplifier (PA) was designed in 90-nm CMOS technology. The stack configuration overcomes the low breakdown voltages of scaled transistors. The proposed power amplifier achieves a saturated output power of 21.7 dBm and 1-dB compressed output power (OP 1dB ) of 18.9 dBm with peak power-added efficiency (PAE) of 16.7% at 3-V supply voltage. The chip occupies an area of 0.53 × 0.51 mm 2 , including all the dc and RF pads.
SDGs
Type
conference paper