In0.18Al0.82N/AlN/GaN MIS-HEMT on Si with Schottky-drain contact

Journal

Solid-State Electronics

Journal Volume

129

Pages

206-209

Date Issued

2017

Author(s)

Lee, M.H

Tang, M.

Chen, P.-G.

DOI

10.1016/j.sse.2016.11.002

URI

https://www.scopus.com/record/display.uri?eid=2-s2.0-85007199265&origin=resultslist&sort=plf-f&cite=2-s2.0-85007199265&src=s&imp=t&sid=d99d8757ff6572f8ff403421c5a8cd80&sot=cite&sdt=a&sl=0

SDGs

[SDGs]SDG7

Type

letter