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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I on and nearly defect-free channels
Details
Triangular-channel Ge NFETs on Si with (111) sidewall-enhanced I on and nearly defect-free channels
Journal
International Electron Devices Meeting, IEDM
Date Issued
2012
Author(s)
CHEE-WEE LIU
DOI
10.1109/IEDM.2012.6479090
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84876144759&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/372775
Type
conference paper
