Dynamic Analysis of 1.3μm GaAs-based Semiconductor Lasers
Date Issued
2004
Date
2004
Author(s)
Luan, Jia-Xing
DOI
zh-TW
Abstract
In this paper, 1.3μm GaAs-based semiconductor lasers including of both InGaAsN quantum well lasers and InAs/InGaAs quantum dot lasers have been measrred.
At room temperature, light-current, spectral and dynamic characteristics of lasers have been investigated. We observed the threshold current density will be effect with the layers of quantum dot lasers. Threshold current density of 5-stack quantum dot laser with 1.2 mm cavity length was achieved 161.7 A/cm2, and threshold current density of 10-stack quantum dot laser with 1.2 mm cavity length was achieved 223.1 A/cm2.
The maximum relaxation oscillation frequency of 1.3 µm InGaAs/GaAs quantum dot lasers achieved is 2.67 GHz, corresponding to a modulation bandwidth of 4.1 GHz. And the maximum relaxation oscillation frequency of 1.3 µm InGaAsN/GaAs quantum well lasers achieved is 7.4 GHz.
Subjects
砷化鎵
1.3微米
半導體
雷射
動態分析
Dynamic
Analysis
1.3μm
GaAs-based
Semiconductor
Lasers
Type
thesis
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