Cubic GaN grown on (0 0 1) GaAs substrate by RF plasma assisted gas source MBE
Resource
Journal of Crystal Growth 241 (3): 320-324
Journal
Journal of Crystal Growth
Journal Volume
241
Journal Issue
3
Pages
320-324
Date Issued
2002
Date
2002
Author(s)
Abstract
Cubic GaN films have been grown on (0 0 1) GaAs substrates by using RF plasma assisted gas source MBE. The cubic GaN films were deposited at different Ga-flux to N-flux ratios that were determined by deposition rates directly. Three growth regimes are defined in the cubic GaN growth diagram. The optical quality of these films was measured by photoluminescence (PL). Micro-Raman scattering was performed to analyze the crystallization of the films. The optimal flux ratio for cubic GaN grown at Ts = 720°C is on the boundary between intermediate Ga stable regime and Ga droplet regime. © 2002 Elsevier Science B.V. All rights reserved.
Subjects
A1. Crystal structures; A1. Growth models; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting gallium compounds
Other Subjects
Chemical vapor deposition; Crystal lattices; Crystallization; Film growth; Molecular beam epitaxy; Photoluminescence; Raman scattering; Semiconducting gallium arsenide; Thermal effects; Thin films; Optical quality; Gallium nitride
Type
journal article
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