砷化銦鎵HFET MMIC 製程(1/3)
Date Issued
1999-07-31
Date
1999-07-31
Author(s)
DOI
882219E002009
Abstract
For more power gain and current,
shrinking gate length but at the same time
decreasing gate resistance is essential. The T
shape submicron gate is the most effective
way to meet both requirements. In this year,
our research is focused on the fabrication of
the T-shape submicron gate length by
photoresist reflowing method. Using the
flowing property of photoresist under high
enough temperature and tri-layer photoresist
structure, we have formed the submicron Tgate
without resorting to the E-beam or Xray
lithography.
Subjects
GaInP HFET MMIC processing
Publisher
臺北市：國立臺灣大學電機工程學系暨研究所
Type
report
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